凭借多年丰富的生产经验，我们可以生产高质量的任意晶向、抛光或不抛光的蓝宝石晶片。通过我们的抛光工艺可以减小蓝宝石晶片的厚度，从而获得所需的厚度、以及更好的TTV和更低的表面粗糙度。
特殊晶向、带或者不带定位边都可依据客户的要求来定制生产。对于1英寸C面（0001）蓝宝石晶片，我们通常提供不带定位边的圆形晶片。
Specifications of 1英寸C面（0001）蓝宝石晶片
| Item | 1-inch C-plane(0001) 430μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | C-plane(0001) | |
| C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
| Diameter | 25.4 mm +/- 0.1 mm | |
| Thickness | 430 μm +/- 25 μm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| TTV | < 5 μm | |
| BOW | < 5 μm | |
| WARP | < 5 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
注：可依据客户需求定制生产任意晶向、厚度蓝宝石晶片。
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