可提供任意晶向，如：C面、A面、R面、M面、N面、V面、10-14等。
除了标准尺寸和晶向外，还提供各种偏角和是否带定位边，以最大限度地满足客户在研究或业务方面的灵活性。所有蓝宝石晶片都在100级洁净间进行清洁和包装，都是直接应用外延Epi-ready等级，以满足客户严格的外延生长要求。
一、A面（11-20）蓝宝石晶片
A面（11-20）蓝宝石晶片具有均匀的介电常数和高绝缘特性，因此通常用于混合微电子应用，A-plane也可用于高超导体的生长。
例如：TlBaCaCuO（TbBaCaCuO）、Tl-2212，在蓝宝石氧化铈（CeO2）复合衬底上生长异质外延超导薄膜等。
| Item | 2-inch A-plane(11-20) 430μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | A-plane(11-20) | |
| Diameter | 50.8 mm +/- 0.1 mm | |
| Thickness | 430 μm +/- 25 μm | |
| Primary Flat Orientation | C-plane(0001) +/- 0.2° | |
| Primary Flat Length | 16.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| TTV | < 10 μm | |
| BOW | < 10 μm | |
| WARP | < 10 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
注：可依据客户需求定制的生产任意晶向、厚度的蓝宝石晶片。
二、M面（10-10）蓝宝石晶片
由于蓝宝石在日盲紫外探测中的应用前景，宽禁带MgZnO合金半导体薄膜越来越受到人们的关注。采用低压金属有机化学气相沉积（LP-MOCVD）方法在M面（10-10）蓝宝石晶片上制备了一系列不同成分的MgxZn1-xO薄膜。
我司可提供具有优异表面质量的M面（10-10）蓝宝石晶片，表面抛光粗糙度可控制小于0.5nm。
无论您是寻找双面还是单面抛光蓝宝石晶片，请联系我们，我们会为您的业务推荐最合适的；
Item | 2-inch M-plane(10-10) 430μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | M-plane(10-10) | |
Diameter | 50.8 mm +/- 0.1 mm | |
Thickness | 430 μm +/- 25 μm | |
Primary Flat Orientation | C-plane(0001) +/- 0.2° | |
Primary Flat Length | 16.0 mm +/- 1.0 mm | |
Single Side Polished (SSP) | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm | |
Double Side Polished (DSP) | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
Back Surface | Epi-polished, Ra < 0.5 nm (by AFM) | |
TTV | < 10 μm | |
BOW | < 10 μm | |
WARP | < 10 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, 25 pieces in one cassette packaging or single piece packaging. | |
注：可提供任意晶向和厚度的定制化蓝宝石晶片。
三、R面（1-102）蓝宝石晶片
R面（1-102）蓝宝石晶片是用于微电子IC应用中硅的异质外延沉积的优选材料。R面是蓝宝石的非极性面。因此，R面在蓝宝石器件中的位置不同，蓝宝石器件的力学、热学、电学和光学性能都会发生很大的变化，这也会影响蓝宝石器件的后续加工性能、加工效率和加工成品率。
为了使蓝宝石晶棒和后续蓝宝石产品的晶体结构一致，更常用的方法是在蓝宝石晶棒上加工一个A方向的表面作为蓝宝石晶片（后续蓝宝石产品）的平面取向，使蓝宝石晶棒和晶片的R方向位置一致。
Specifications of R面（1-102）蓝宝石晶片
| Item | 2 -inch R-plane(1-102) 430μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | R-plane(1-102) | |
| Diameter | 50.8 mm +/- 0.1 mm | |
| Thickness | 430 μm +/- 25 μm | |
| Primary Flat Orientation | 45 +/- 1deg. counter-clockwise from C-axis projection on R-plane | |
| Primary Flat Length | 16.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| TTV | < 10 μm | |
| BOW | < 10 μm | |
| WARP | < 10 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
注：可提供任意晶向和厚度的定制化蓝宝石晶片。
四、N面（11-23）蓝宝石晶片
N面蓝宝石晶片不像C面（0001）、A面（11-20）或R面（1-102）晶片那样常见。研究表明，在A面（11-20）蓝宝石上生长的AlN，在生长初期，AlN与蓝宝石的N面（11-23）外延关系随氮化温度的变化而变化，而在N面蓝宝石上生长的AlN则保持不变。
其他薄膜，如ZnTe外延层，可以通过分子束外延生长在N面（11-23）蓝宝石晶片上。
Specifications of N面（11-23）蓝宝石晶片
| Item | 2-inch N-plane(11-23) 430μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | N-plane(11-23) | |
| Diameter | 50.8 mm +/- 0.1 mm | |
| Thickness | 430 μm +/- 25 μm | |
| Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
| Primary Flat Length | 16.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| TTV | < 10 μm | |
| BOW | < 10 μm | |
| WARP | < 10 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
注：可依据客户需求定制生产任意晶向、厚度的蓝宝石晶片。
五、V面（22-43）蓝宝石晶片
利用X射线摇摆曲线（XRC）研究了V面（22-43）图案化蓝宝石衬底（PSS）上（20-21）GaN薄膜的晶格面曲率和晶格面倾斜等晶体形态。
从GaN（20–22）和（12–31）衍射的非对称XRC结果发现，晶格面倾斜高度依赖于薄膜厚度和生长条件。TEM分析证实，在（22-43）PSS上（20-21）GaN薄膜的C面抑制生长过程中，通过调节V/III比可以有效地抑制基面层错的产生。
Specifications of V面（22-43）蓝宝石晶片
| Item | 2-inch V-plane(22-43) 430μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | V-plane(22-43) | |
| Diameter | 50.8 mm +/- 0.1 mm | |
| Thickness | 430 μm +/- 25 μm | |
| Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
| Primary Flat Length | 16.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| TTV | < 10 μm | |
| BOW | < 10 μm | |
| WARP | < 10 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
注：可提供任意晶向和厚度的定制蓝宝石晶片。
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